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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper QWC1

Second harmonic azimuthal anisotropy spectroscopy and doping dependence at hydrogen-covered Si(OO1) surfaces

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Abstract

Optical second harmonic (SH) spectroscopy with femtosecond pulses is a promising tool for real-time measurement of epitaxial growth rate and surface chemical processes during chemical vapor deposition at Si( 001) surfaces.1 As a basis for such applications, understanding of the physical mechanism by which surface hydrogen (H) alters the near-surface SH susceptibility is essential. Earlier work proposed relaxation of dimer-induced strain upon dihydride-ternrination as a mechanism.2 While probably important for high H-coverages (θH > 1 ML), this mechanism cannot explain strong SH spectroscopic changes observed for lower coverages (0 < θH < 1 ML),3 the important regime in growth monitoring. Quenching of space charge fields on monohydride passivation of surface dangling bonds provides an alternative mechanism, suggested by the important role of dcelectric-field-induced SH (EFISH) demonstrated in SH studies of Si(001) MOS structure.4 Here we report a complete SH azimuthal rotation spectroscopic study of variably-Hterminated undoped and heavily-p-typedoped Si(001) surfaces to obtain a comprehensive picture of the nonlinear spectroscopy of monohydride termination. The results support a model in which H-modulation of bulk space-charge EFISH plays important role for high-doping, while H-quenching of a strong near-surface electric field caused by local valence electron redistribution resulting from surface charge transfer dominates for low-doping.

© 1997 Optical Society of America

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