Abstract

The unique electrical and optical properties of GaAs grown by MBE at temperatures as low as 200 °C (LT-GaAs) have attracted considerable attention. The low temperature growth results in the incorporation of a large density of native defects [10²⁰ cm⁻³ As antisites (As_Ga and 5 × 10¹⁸ cm⁻³ Ga vacancies (V_Ga)], Annealing decreases the density of point defects and causes the excess arsenic to precipitates into metallic dusters. Previous investigations of this class of materials have focused mostly on the ultrafast mobile carrier lifetime and ignored the carrier lifetime in trap states, which could limit the high frequency performance of LT-GaAs-based devices.

© 1997 Optical Society of America