Abstract

We report a new type of optically induced, transient diffraction grating in a multiple quantum well (MQW) semiconductor. The grating is formed by the spatial modulation of the electron spin orientation within a uniform excess carrier distribution and allows the measurement of the in-well electron mobility. We present four-wave mixing results for spin- gratings in a GaAs/ AlGaAs MQW semiconductor using picosecond laser pulses and compare the diffusion coefficients determined from spin and amplitude gratings.

© 1996 Optical Society of America

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