Abstract

To establish a new macrofabrication of semiconductors, we need to clarify the mechanisms of reaction between material surfaces and reactive species. The dry etching process in Si surface especially is the most spreading process in electronics applications and has been extensively studied.¹ The optical second harmonic generation is also a powerful technique to study surface science because of its surface sensitivity, nondetrimental and in situ observation, and the ultrafast response.² Femtosecond time-resolved studies of the desorption and/or reaction on the metal or semiconductor surfaces have been carried out.³'⁴ We report the results of the laser-md'iced. surface teacikœv and/or desorption on the Si(lll)/Cl₂ system by use of the femtosecond second harmonic generation.

© 1996 Optical Society of America