In recent years the wide bandgap II-VI semiconductors such as ZnSe and its microstructures have been subjected to extensive studies because these materials can be used to develop laser diodes and optoelectronic devices operating in the blue spectral region. Formation and propagation of nonradiative defects are the major degradation mechanisms that prevent room temperature operation of blue-green laser diodes with long life-time.1 Therefore study of radiative and nonradiative processes and dynamics will give a better understanding of the factors limiting the room temperature laser diodes. In this paper we report on the study of one- and two-photon excited carrier recombination dynamics of bulk ZnSe by femtosecond time-resolved photoluminescence (PL) using the sum frequency generation technique.2

© 1996 Optical Society of America

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