Macroscopic size effect in second harmonic generation from SiO2-coated Si(111): The role of optical Casmir nonlocality

A. N. Rubtsov; A. A. Fedyanin; E. D. Mishina; A. A. Nikulin; O. A. Aktsipetrov; C. W. van Hasselt; C. W. van Hasselt; M. A. C. Devillers; M. A. C. Devillers; Th. Rasing; Th. Rasing

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1996),
paper QTuA4

Macroscopic size effect in second harmonic generation from SiO₂-coated Si(111): The role of optical Casmir nonlocality

A. N. Rubtsov, A. A. Fedyanin, E. D. Mishina, A. A. Nikulin, O. A. Aktsipetrov, C. W. van Hasselt, M. A. C. Devillers, and Th. Rasing

Quantum Electronics and Laser Science Conference 1996

Anaheim, California United States
2–7 June 1996
ISBN: 1-55752-445-9

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Condensed Phase Cavity QED (QTuA)

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A. N. Rubtsov, A. A. Fedyanin, E. D. Mishina, A. A. Nikulin, O. A. Aktsipetrov, C. W. van Hasselt, M. A. C. Devillers, and T. Rasing, "Macroscopic size effect in second harmonic generation from SiO2-coated Si(111): The role of optical Casmir nonlocality," in Quantum Electronics and Laser Science Conference, R. Freeman and P. Corkum, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1996), paper QTuA4.

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Abstract

The buried Si:SiO₂ interface as a basic constituent of MOS devices is one of the most attractive objects for application of second harmonic generation (SHG). The SHG sources are attributed mostly to the broken inversion symmetry of Si:SiO₂ interface. This symmetry breaking is caused by the crystalline structure discontinuity, the local strain,¹ band bending by the external dc-electric field and/or the trapped charge,² etc. Two specific scales enter into the oxide-thickness dependence of the SHG: the length l_opt ~ 100 nm being the measure of nonuniformity of optical field as a result of the interference,³ and f₀ - 1 nm determined by the microscopic structure of interface.

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