Abstract

Control of spontaneous emission in a semiconductor microcavity has attracted a lot of interest and investigation, as a result of its fundamental cavity QED aspects and its application to low threshold or even thresholdless lasers. In the strong coupling regime, the coupled exciton-po- lariton mode splitting has been observed,1 and the cavity-polariton dispersion curve has shown anti-crossing behavior.2 However, in those cases only one quantum well (QW) exciton mode interacts with one cavity photon mode.

© 1996 Optical Society of America

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References

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