Abstract
In this presentation we report on a determination of the biexciton binding energies in GaAs/AlGaAs quantum wells of different widths and the results of a theoretical calculation of the ratio of the biexciton binding energy to that of the exciton .
© 1996 Optical Society of America
PDF ArticleMore Like This
W. Langbein, J. M. Hvam, M. Umlauff, H. Kalt, B. Jobst, and D. Hommel
QThD4 Quantum Electronics and Laser Science Conference (CLEO:FS) 1997
Hailin Wang, Jagdeep Shah, T. C. Damen, A. L. Ivanov, H. Haug, and L. N. Pfeiffer
QThJ1 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996
W. Langbein, P. Borri, and J.M. Hvam
RTuB2 Radiative Processes and Dephasing in Semiconductors (RPDS) 1998