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Carrier tunneling in semiconductor heterostructures has been a topic of research interest because of its fundamental and applied aspects. Previous research concentrated mostly on the III-V (Ga, Al)As/GaAs and (Ga, In)As/(Al, In)As asymmetric double quantum wells (ADQWs)1,2 where excitonic effects do not play a significant role.3 Exciton binding energy in wide-gap II-VI semiconductors is relatively large; thus their tunneling structures are ideal to study the influence of excitonic effects on the tunneling process.
© 1996 Optical Society of America
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