Abstract

Generation of far-infrared light by optically excited semiconductors has been reported by numerous groups of researchers.¹² Although various mechanisms, such as current surge and depletion field-induced optical rectification (OR), have been proposed, recent results³ have shown that bulk OR accounts for a major portion of the observed teraherz signal. Recently we evaluated the OR coefficients of bulk zinc-blende semiconductors excited above the bandgap,⁴ and the results are in agreement with experimental data.

© 1995 Optical Society of America