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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper QWG4

Transient pulse response of ln0.2Ga0.8As/GaAs microcavity lasers

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Abstract

We report on the transient emission of microcavity lasers at 20 K after femtosecond optical excitation. The two investigated structures contain one and three 8-nm In0.2Ga0.8As quantum wells (QWs) located in the center of λ cavities formed by AlAs/GaAs Bragg-reflector mirrors. The bottom mirror is n-boped and has 30.5 layer pairs, and the top mirror is p-doped and consists of 20 layer pairs. The cavity features a 105-nm-wide stop band centered at the resonance wavelength, which varies from 1020 nm at the wafer center to 860 nm at the edge because of growth inhomogeneitics. The QW band-gap energy is nearly independent of the position on the wafer (Δλ < 2 nm) and is centered at 922 nm at 20 K. The microcavity-laser-emission wavelength is tuned with respect to the gain spectrum of the QWs by probing various points on the wafer. The QWs are directly excited by 80-fs laser pulses at 821 nm with photon energy below the GaAs barriers. The time evolution of the emission is traced by an upcP11 version technique.

© 1995 Optical Society of America

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