Abstract
The two-photon-absorption (TPA) coefficient is an important parameter of semiconductors. However, there is a wide disparity in the reported values of the TPA coefficient, especially in the results obtained with nanosecond pulsed lasers for which photogenerated carrier absorption is expected to dominate. To study the influence of free-carrier absorption (FCA), we analyzed theoretically TPA and FCA in GaAs with a nanosecond laser source.
© 1995 Optical Society of America
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