Abstract
In polar materials such as GaAs:Si shallow-donor transitions become strongly coupled to LO phonons when the transition energy approaches the LO-phonon energy. This resonant polaron effect manifests itself around the LO-phonon energy (296 cm−1) as an avoided crossing of the electronic-transition energy versus magnetic field.1,2 However, in the region between the TO and LO phonons, the Reststrahlen band, photoconductivity measurements are extremely difficult because of the very small penetration depth of light in this region.2 In addition, the strongly varying dielectric function of the GaAs around the TO/LO-phonon frequencies gives rise to artifacts in the weak photoconductivity spectra.2
© 1995 Optical Society of America
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