Abstract
The structural symmetry of Si surfaces has been probed by using second-harmonic generation (SHG) in reflection.1 Subsequent experiments extended the technique to study detailed surface spectroscopy.2 By using third-harmonic generation (THG) in reflection, ion-inplanted Si has been studied, but with limited signal levels.3 Because third-harmonic generation in reflection is dipole-allowed in the bulk, it was speculated that THG would unambiguously probe the structural characteristic of the bulk. In this experiment we demonstrated this technique by using Si as an example, and we contend that THG is more favorable than SHG, particularly when a femtosecond mode-locked Ti:sapphire laser is used.
© 1995 Optical Society of America
PDF ArticleMore Like This
H. W. K. TOM and G. D. AUMILLER
TUGG5 International Quantum Electronics Conference (IQEC) 1986
D. Hahn, H. Zhou, C. K. Wong, S. B. Roscoe, and T. J. Marks
QTuC1 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995
P.T. Wilson, R.W. Kempf, M.C. Downer, O.A. Aktsipetrov, and E.D. Mishina
QThB6 Quantum Electronics and Laser Science Conference (CLEO:FS) 1999