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Conferences > QELS > 1995 > QThJ > QThJ1
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper QThJ1

Broadband four-wave mixing in semiconductor waveguides

H. Q. Le, J. P. Donnelly, S. H. Groves, E. A. Swanson, A. Darwish, G. Lenz, and E. P. Ippen

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Abstract

Four-wave mixing (FWM) near the semiconductor band edge is efficient owing to an enhancement of the third-order nonlinear susceptibility χ(3). The enhancement is caused by the one-photon-resonance mechanism which can be stronger than the two-photon absorption mechanism that is dominant in the region far below the band-edge; the mechanisms are illustrated in Fig. 1.

© 1995 Optical Society of America

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