Diffraction effects in the spatial and spectral properties of terahertz radiation from bulk GaAs excited by ultrashort pulses

N. Sarukura; Z. Liu; Y. Segawa; S. Koshihara; S. Koshihara; K. Shimoyama; K. Shimoyama; Y. Kondo; Y. Kondo; Y. Shibata; Y. Shibata; T. Takahashi; T. Takahashi; S. Hasebe; S. Hasebe; M. Ikezawa; M. Ikezawa

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1995),
paper QThG35

Diffraction effects in the spatial and spectral properties of terahertz radiation from bulk GaAs excited by ultrashort pulses

N. Sarukura, Z. Liu, Y. Segawa, S. Koshihara, K. Shimoyama, Y. Kondo, Y. Shibata, T. Takahashi, S. Hasebe, and M. Ikezawa

Quantum Electronics and Laser Science Conference 1995

Baltimore, Maryland United States
22–26 May 1995
ISBN: 1-55752-402-5

From the session
Poster Session (QThG)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
N. Sarukura, Z. Liu, Y. Segawa, S. Koshihara, K. Shimoyama, Y. Kondo, Y. Shibata, T. Takahashi, S. Hasebe, and M. Ikezawa, "Diffraction effects in the spatial and spectral properties of terahertz radiation from bulk GaAs excited by ultrashort pulses," in Quantum Electronics and Laser Science Conference, T. Heinz, G. Stegeman, J. Bokor, and R. Slusher, eds., Vol. 16 of OSA Technical Digest (Optica Publishing Group, 1995), paper QThG35.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

The mechanism and application to opto- electronics of terahertz radiation induced by lasers have been studied intensively.^1,2 The mechanism of terahertz radiation from semiconductors has been explained by the dipole induced by the surface surge current or by optical rectification,³ and this phenomenon can be applied as an interface between ultrafast optics and electronics. It is also an attractive light source for studying time-resolved far-infrared spectroscopy.

PDF Article

More Like This

Diffraction effects in spatial and spectral properties of THz radiation from bulk GaAs excited by ultrashort pulses

N. Sarukura, Z. Liu, Y. Segawa, S. Koshihara, K. Shimoyama, Y. Kondo, Y. Shibata, T. Takahashi, S. Hasebe, and M. Ikezawa
UTUE9 Ultrafast Electronics and Optoelectronics (UEO) 1995

Diffraction effects in spatial and spectral properties of THz radiation from ultrashort-pulses-excited GaAs

N. Sarukura, Z. Liu, Y. Segawa, S. Koshihara, K. Shimoyama, Y. Kondo, Y. Shibata, T. Takahashi, S. Hasebe, and M. Ikezawa
FP5 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 1995

Effect of proton implantation on optically excited terahertz radiation from GaAs

Gong-Ru Lin and Ci-Ling Pan
JThA6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Previous Article Next Article