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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper QThG30

Second-conduction-band relaxation of a photoexcited hot-electron distribution in GaP

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Abstract

Institute for Ultrafast Spectroscopy and Lasers, New York State Center for Advanced Technology for Photonic Materials and Applications, Department of Physics, City College and Graduate School, City University of New York, Convent Avenue at 138th Street, New York, New York 10031 By using a 500-fs 293-nm pump pulse, the dynamics of photoexcited electrons in the k ≠ 0, X6 and X7 satellite valleys of the first and second conduction bands, respectively, were studied. The kinetics of carriers in these valeys were probed by a 500-fs IR (2.5-5.5-μm) pulse that minitored the induced absorption due to the tree-electron populations, see Fig. 1. The technique of using an ultrafast IR probe pulse is seen to be unique in obtaining information about the relaxation of hot electrons.

© 1995 Optical Society of America

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