Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper QWH29

Elementary excitation model of the excitonic resonant linearity in a GaAs quantum well

Not Accessible

Your library or personal account may give you access

Abstract

Recent progress in microfabrication technology increases the prospects for realizing very-low-power nonlinear optical devices with strong-light-field confinement. To design such devices, we need to examine nonlinear processes at the weak-excitation limit. In ZnSe we found a power region in which the nonlinear phase shift showed third-order responses even at the exciton resonance.1 There, we can apply perturbational techniques. Thus we can follow the nonlinear optical processes, showing the change of the quantum-mechanical states of the media step by step. For the third-order nonlinearity near exciton resonance, the relevant states are the ground state, the one-exciton state, and the two-exciton state. We call such techniques elementary excitation.

© 1993 Optical Society of America

PDF Article
More Like This
Elementary excitation picture of excitonic resonant nonlinearity in semiconductors

Makoto Kuwata-Gonokami
FH.3 OSA Annual Meeting (FIO) 1993

Coherent Exciton Effects in Quantum Wells

E. O. Göbel
QThC.1 Quantum Optoelectronics (QOE) 1993

Spin dynamics and homogeneous linewidth of free excitons in GaAs quantum wells

Vivek Srinivas, Yung Jui Chen, and Colin E. C. Wood
QTuB2 Quantum Electronics and Laser Science Conference (CLEO:FS) 1993

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.