Abstract

We studied the size dependence of the recovery rate of the absorption bleaching of CdTe quantum dots embedded in a glass matrix. The samples contained 1% by volume of semiconducting material. Annealing the samples at temperatures between 560 and 580°C for different times controlled the dot size. Figure 1 shows the absorption profile for a sample having dots with an average radius of 3.1 nm. Five samples were studied, having an average dot radius ranging from 2.5 to 4.2 nm. The dot radii were estimated from the shift of the 1S-1S transition with respect to the band gap of bulk CdTe, by assuming an infinite potential barrier at the surface.

© 1993 Optical Society of America