Abstract

Narrow-gap type-II superlattices, such as InAs-GaSb and InAs-Ga_1−xIn_xSb, are presently under rapid development as attractive infrared-detector^1,2 and nonlinear-optical³ materials for the long-wave infrared (LWIR). In both of these applications the recombination lifetime is central in the ultimate performance of devices. The only previously reported attempt to probe lifetimes consisted of time-resolved photoconductivity measurements on an InAs-Ga_0.65In_0.35Sb superlattice.⁴ Although two decay constants were observed, 2 ns and 2 μs, one could not role out the possibility that both were the result of trapping effects.

© 1993 Optical Society of America