Abstract
A novel external-cavity InGaAsP semiconductor laser arrangement is described which is capable of supporting dual-wavelength osciilation in both continuous wave and modelocked regimes. The cavity is based on a modified Michelson resonator configuration (see Fig. 1) where each cavity arm is effectively isolated from the other due to the wavelength selective reflectivities of the two diffraction gratings. A variable attenuator placed in one cavity arm enables continuous variation of the relative power distribution of the two wavelength components.
© 1993 Optical Society of America
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