Abstract
We discuss semiconductors exhibiting large- electric-field-tunable nonlinear optical properties associated with intersubband transitions in the infrared. By careful bandgap engineering, we have designed coupledwell semiconductors (Fig. 1) in the AlInAs/GaInAs system with extremely large and and have been able to observe for the first time the resonant Stark enhancement of third-harmonic generation, and multiphoton ionization in a quantum well. These structures are characterized by a large linear Stark effect so that the nonlinear susceptibilities can be resonantly enhanced or quenched by application of a moderate electric field.
© 1992 Optical Society of America
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