Measured transition from two-dimensional to three-dimensional electroabsorption as quantum well barriers are lowered

K. W. Goossen; J. E. Cunningham; M. Williams; F. Storz; W. Y. Jan

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 1992),
paper QThE3

Measured transition from two-dimensional to three-dimensional electroabsorption as quantum well barriers are lowered

K. W. Goossen, J. E. Cunningham, M. Williams, F. Storz, and W. Y. Jan

Quantum Electronics and Laser Science Conference 1992

Anaheim, California United States
10–15 May 1992
ISBN: 1-55752-540-5

From the session
Optical Interactions in New Structures (QThE)

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K. W. Goossen, J. E. Cunningham, M. Williams, F. Storz, and W. Y. Jan, "Measured transition from two-dimensional to three-dimensional electroabsorption as quantum well barriers are lowered," in Quantum Electronics and Laser Science Conference, E. Ippen, S. Chu, J. Shah, and C. Weiman, eds., Vol. 13 of OSA Technical Digest (Optica Publishing Group, 1992), paper QThE3.

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Abstract

Recently, we reported the observation of strong room-temperature excitons in GaAsAlxG_1-XAs multiple-quantum wells (MQWs) for x as low as 0.02.¹ This observation has important technological ramifications for electro-optic devices because of enhanced electroabsorption resulting from the rapid ionization of the exciton with field,¹ and because the escape time of photoexcited carriers in MOWs with x ≤ 0,04 is equivalent to bulk Ga As,² which results in superior high- intensity modulation.³

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