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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper QWD6

Femtosecond hot-carrier-induced optical nonlinearities in GaAs

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Abstract

We investigate the many-body effects from nonequilibrium carriers produced in III–V semiconductors. The results of direct femtosecond spectroscopic measurements of carrier-induced changes of refractive index n and absorption coefficient α in GaAs at room temperature are compared with a theory developed for a cold electron-hole plasma. The discrepancies observed near the band gap are assigned to the difference in many-body effects, such as band-gap renormalization and plasma screening of electron-hole interactions between cold and hot carriers. A short-lived refractive index spectral hole burning near the optically coupled states is also observed for the first time.

© 1991 Optical Society of America

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