Abstract
We investigate the many-body effects from nonequilibrium carriers produced in III–V semiconductors. The results of direct femtosecond spectroscopic measurements of carrier-induced changes of refractive index n and absorption coefficient α in GaAs at room temperature are compared with a theory developed for a cold electron-hole plasma. The discrepancies observed near the band gap are assigned to the difference in many-body effects, such as band-gap renormalization and plasma screening of electron-hole interactions between cold and hot carriers. A short-lived refractive index spectral hole burning near the optically coupled states is also observed for the first time.
© 1991 Optical Society of America
PDF ArticleMore Like This
T. Gong, P. Mertz, and P. M. Fauchet
FC3 Picosecond Electronics and Optoelectronics (UEO) 1991
T. Gong, W. L. Nighan, D. A. Young, and P. M. Fauchet
ML5 OSA Annual Meeting (FIO) 1989
G. R. Olbright, W. S. Fu, G. E. Poirier, R. P. Bryan, J. F. Klein, A. Paul, R. Binder, S. W. Koch, and J. S. Harris
QWD7 Quantum Electronics and Laser Science Conference (CLEO:FS) 1991