Abstract
The system of hydrogen adsorbed on silicon surfaces represents a prototype for understanding the interaction of adsorbates with semiconductor surfaces. It is also a material system of great technological interest because of its critical role in chemical vapor deposition of silicon. Although considerable knowledge has been gained concerning the nature of the adsorbed hydrogen on silicon surfaces,1 relatively little is known about the elementary dynamical processes of desorption and diffusion. We have investigated these processes by means of surface second-harmonic (SH) generation.2–4
© 1991 Optical Society of America
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