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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper THBB5

Intersubband relaxation in modulation-doped multiple quantum well structures

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Abstract

Recently, intersubband relaxation In modulation- doped GaAs/AIxGa1-xAs multiple quantum well structures (MD MQWS) has been observed directly by an IR bleaching technique.1,2 The intersubband time constants determined experimentally are surprisingly long (≈10 ps). But, as the well width increases, electron lifetimes decrease. A well width change from 47 to 59 Å results in a factor of ~2 decrease in relaxation time.

© 1989 Optical Society of America

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