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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications, Systems and Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper PWE2

Laser annealing of doped semiconductors for ultra-shallow junctions: Systems for thermal processes in the ms range

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Abstract

For future 65 nm and smaller nodes, thermal anneal processes in the ms range or shorter are required. Using laboratory laser systems, encouraging results have been achieved, which demonstrate the feasibility of the process.

© 2005 Optical Society of America

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