Abstract

The effect of the metal grid lines has an effect on the calculation of the reflection spectrum of the solar cell. The optimization of the anti-reflection film structure of GaInP/GaAs/Ge triple junction solar cells is aimed at maximizing the short-circuit current density. The influence of metal grid lines on the design of anti-reflection film under the optimized conditions is discussed.

© 2019 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription