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Single Crystalline SrTiO3 as a Memristive Model System: Roles of Oxygen Vacancies and Schottky Barrier, and Neural Function Mimicking

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Abstract

Single crystalline SrTiO3 is used as a model system: oxygen vacancy drift from the anode to the cathode in the crystal bulk is responsible for the electroforming of acceptor-doped SrTiO3; while for donor-doped SrTiO3, the high/low resistance states are unambiguously related to the Schottky barrier height; more importantly, the basic neural functions, e.g. learning, forgetting and rehearsal, are mimicked by the Ni/Nb:SrTiO3 Schottky junction.

© 2015 Optical Society of America

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