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The electron transport lengths in doubly doped crystals and theirs effects on nonvolatile holographic storage

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Abstract

In this paper electron transport lengths are analyzed for nonvolatile holographic recording in doubly doped crystals. Based on vectorial solution of Kukhtarev equations for doubly doped crystals, electron transport lengths for two centers are given and compared with single doped situations. Effective electron transport length is proposed for explaining very low sensitivity in this recording method. It can be seen that the electron transport lengths vary with the intensity ratios of recording light to sensitive light and effective electron transport length is about 0.1nm for maximal recording depth while in single doped crystals the electron transport lengths commonly are few nm. This explains why the recording times are so long for nonvolatile holographic recording in doubly doped crystals.

© 2005 Optical Society of America

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