Abstract

The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in UV spectral region. The photorefractive grating is induced by the electroabsorption effect near the band-edge. Two beam coupling experiments were performed at a wavelength of 363.8 nm. The experimental results indicate that absorption grating mainly contributes to the beam coupling effect.

© 2005 Optical Society of America

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