Abstract

We measured the electro-optical properties of Sn2P2S6 single crystals for electric fields parallel to the crystallographic x-axis. A direct interferometric technique is used and unclamped as well as clamped values are determined. The measured coefficients are large, with a maximum of 174 ± 10pm/V for the unclamped coefficient rT 111 at ? = 633nm. The corresponding reduced half-wave voltage is V ? = 124 V.

© 2003 Optical Society of America

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