Abstract

2.0 mol% MgO-doped near-stoichiometric LiNbO3 (Mg:SLN) crystals were grown by vapor transport equilibration. Compared with those of MgO-doped congruent LiNbO3 (Mg:CLN) crystals, the absorption edge shifts toward shorter wavelength and there are no measureable photorefractive damage at 800 nm to intensities of as much as 10 MW/cm2. And uniformity periodic domain structure in a 1.0 mm thick slab of Mg:SLN was fabricated by applying external pulsed field. For a input power of 210 mW, up to 38 mW of violet light was obtained through third-order second harmonic generation, which represents a conversion efficiency of 18.1%. The fluctuation of the violet light output power caused by the photorefractive damage was not observed under these conditions, which confirmed that Mg:SLN had a very high photorefractive damage resistance.

© 2003 Optical Society of America

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