Abstract

We determine ultrafast carrier dynamics characteristic of disordered semiconductors, including both dispersive transport and bimolecular recombination, via self-consistent modeling of time-resolved measurements in both the far-infrared (THz) and near-infrared spectral regions.

© 2005 Optical Society of America

PDF Article
More Like This
Ultrafast carrier dynamics in amorphous semiconductors determined by time-resolved THz and NIR spectroscopy

A.V. Vasudevan Nampoothiri and S.L. Dexheimer
QWC5 Quantum Electronics and Laser Science Conference (QELS) 2005

Ultrafast carrier trapping in amorphous semiconductors studied by time-resolved THz spectroscopy

A.V. Vasudevan Nampoothiri, B.P. Nelson, and S.L. Dexheimer
QWC3 Quantum Electronics and Laser Science Conference (QELS) 2003

Ultrafast conductivity in amorphous semiconductors studied by time-resolved THz spectroscopy

A.V. Vasudevan Nampoothiri and S.L. Dexheimer
JMB1 Conference on Lasers and Electro-Optics (CLEO) 2004

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription