Abstract

A new growth sequence of type-II ZnCdSe/Zn(Cd)Te quantum dots (QDs) is developed in order to avoid formation of a parasitic strain inducing ZnSe interfacial layer (IL). This allows for simplifications in fabrication of the intermediate band solar cell device structure based on these QDs, since different Cd compositions in QDs and barriers is no longer required to grow stress free structures. X-ray diffraction and excitation dependent intensity photoluminescence studies are used to support such a conclusion.

© 2018 The Author(s)

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