Abstract

Ion beam sputtered films typically have high compressive stress. By using high energy primary ions to sputter a SiO2 target and high energy ions from an assist source with an O2 plasma the compressive stress of SiO2 can be significantly reduced down to 62MPa.

© 2019 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription