Abstract

The reduction of residual stress in two kinds of Si3N4/SiO2 dielectric quarter-wave stacks was presented. Si3N4/SiO2 quarter-wave stack with a buffer layer of MgF2 thin film can reduce the residual stress. The effect of aging on the residual stress in two quarter-wave stacks was also investigated. We found the residual stresses in Si3N4/SiO2 multilayer coatings are changed from a compressive state to a tensile stress state with increasing the aging time.

© 2016 Optical Society of America

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