Abstract

Compound Gaussian oscillator model is one of the most commonly used physics model in the study of dielectric coefficient of amorphous glassy material in abnormal dispersion region. A new procedure was demonstrated for that the characteristic peaks of SiO₂ films were equal to chemical component by combining the factorial analysis technology of chemical meterage. Infrared absorption spectrum in the range of wavenumber 400~4000cm⁻¹ was studied. Through matrix analysis of infrared spectrum of ion sputtering prepared SiO₂ films of different thickness (800~100nm), the number of Gaussian oscillators was calculated to be 9, which provide definite physics meaning for the reverse data process of dielectric constant. A comparison of dielectric constant between SiO₂ thin film and fused quartz in the range of wavenumber 3000~4000cm^-1 was made. Results indicated that there is obvious hydration defects in SiO₂ films, which would affect the dielectric constant in the entire infrared range.

© 2016 Optical Society of America