Fluorine doped tin oxide (FTO) films were prepared by a pulse DC magnetron sputtering method with a metal Sn target. FTO films were deposited under two different modes to evaluate their respective optical and electrical properties. In the transition mode, the lowest resistivity of the FTO film was 1.63×10−3 Ω-cm with the average transmittance of 80 % in visible region. Furthermore, FTO films deposited in the oxide mode and mixed simultaneously with H2 could achieve even better resistivity lower to 8.42×10−4 Ω-cm and the higher average transmittance up to 81.08 % in visible region.

© 2013 Optical Society of America

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