Abstract

Insulating film with high coverage can be prepared by RAS (Radical Assisted Sputtering) in combination with bias voltage applying. By applying bias voltage during RAS, selective positive ion etching toward patterned substrate on rotating drum with negative charge occurs at the same time as sputtering. Using this ion etching effect, void-free insulating film can be prepared on pattered substrate, resulting in high coverage coating. In SiO₂ bias voltage coating, it was suggested that densification of SiO₂ occurred at high bias power. This technique shows promise for the application of electric devices such as surface acoustic wave (SAW) filter.

© 2013 Optical Society of America