Abstract
Recently, optical thin films have become increasingly in demand as optical components. SiO2 is most frequently used in optical thin films as a material with a low refractive index. The stress of the film is an important parameter which relates to the adhesion of the film. In this report, the time dependence of the stress of SiO2 optical thin films is discussed in terms of optical characteristics in the infrared region. The optical characteristics and the structure of SiO2 optical thin films prepared by vacuum deposition (using an electron beam gun) and ion-assisted deposition (IAD) were observed by FT-IR, XRD, XPS and SEM. The stress in the SiO2 optical thin films was measured by using an interferometer in order to determine the change in the shape of the substrate. It was found that the SiO2 thin films prepared by vacuum deposition and IAD exhibited compression stress. The Si-OH molecular bond was observed at around 930cm−1 by FT-IR analysis of the sample with a large change in internal stress (conventional vacuum deposition sample). It is considered that this change in the bond was related to the decrease in stress of the films.
© 2010 Optical Society of America
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