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Enhancing the Optical and Electrical Properties of SnO2 Films by Plasma Etching Deposition

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Abstract

Fluorine-doped tin oxide films have been deposited by plasma etching deposition with Sn target. The extinction coefficient is less than 1.5×10−3 in the range of 400nm to 800nm and the lowest resistitivuty is 1.5×10−3 Ω-cm.

© 2010 Optical Society of America

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