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Design of Attenuated Phase-shift Masks for Extreme Ultraviolet Lithography with High Inspection Contrast in Deep Ultraviolet Regime

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Abstract

Attenuated phase-shift masks based on a Fabry-Perot interferometer for extreme ultraviolet lithography have designed, which show not only 180° phase-shift with attenuated reflectance ratio below 0.1 at 13.5-nm, but also high inspection contrast at 257-nm.

© 2007 Optical Society of America

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