Abstract
A dwell time algorithm based local ion beam etching technology using a Gaussian shaped beam density profile has been developed for the local thickness correction of thin films such as aluminum or SiO2 on Si-substrates and optical elements for future processing application, e.g. in the production technology of active and passive microelectronic or optical elements. The goals of the development a thickness uniformity within ±5 nm range over 6 inch substrate area and processing cycles compatible with production needs have been achieved.
© 2002 Optical Society of America
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