Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

InGaAsP Multiple Quantum Well Edge-Emitting LEDs Showing Low Coherency Characteristic Using Selective-Area Metalorganic Vapor Phase Epitaxial Growth

Not Accessible

Your library or personal account may give you access

Abstract

Low coherency multiple-quantum well edge-emitting LEDs were obtained using a special growth technique. The experimental results showed a coupled power of 55 μW into a single-mode fiber and broad spectrum with very small spectral ripples.

© 1996 IEICE

PDF Article
More Like This
Strained multiple quantum well lasers emitting at 1.3 μm grown by low pressure metalorganic vapor phase epitaxy (LP-MOVFE)

D. Coblentz, T. Tanbun-Ek, K. A. Logan, and A. M. Sergent
CFD7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Growth of low-threshold high-efficiency 1.3-μm InGaAsP/InP distributed feedback lasers by vapor phase epitaxy

J. P. BLAHA, K. E. STREGE, J. L. ZILKO, L. J.-P. KETELSEN, M. W. FOCHT, V. G. RIGGS, L. A. GRUEZKE, S. N. G. CHU, S. Y. LEUNG, and S. A. KEESSER
WB1 Optical Fiber Communication Conference (OFC) 1989

A Novel Method for Improving the Performance of InP/InGaAsP Multiple-Quantum-Well Mach-Zehnder Modulators by Phase Shift Engineering

Jun Yu, Claude Rolland, David Yevick, Azmina Somani, and Scott Bradshaw
ITuG4 Integrated Photonics Research (IPR) 1996

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.