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High Power Semiconductor Laser Diodes for OTDRs

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Abstract

Optical Time Domain Reflectometers (OTDRs) are essentially useful for characterizing loss and imperfections in optical fiber cables. Laser diodes (LDs) are used as light sources of OTDRs. To enlarge its dynamic range as much as possible, increase of launched power into the fiber is the first priority. Therefore, high power LDs are strongly demanded. In this paper we will show the design and characteristics of high power strained multiple quantum wells (s-MQW) LDs lasing at 1.3μm, 1.55μm and 1.65μm.

© 1996 IEICE

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