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8-ch, 160-nm-Wavelength-Range Membrane Laser Array Using Selective Epitaxy on InP-on-Insulator Substrate

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Abstract

We fabricate an 8-ch 160-nm-range membrane laser array with selectively grown InGaAlAs-MQWs on a thin InP layer on SiO2/Si. By controlling the material gain peak and lasing wavelength, all lasers exhibit 32-Gbit/s NRZ direct modulation.

© 2021 The Author(s)

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