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Lossless Silicon Photonic ROADM based on a Si3N4 platform and a Monolithically Integrated Erbium Doped Amplifier

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Abstract

The first demonstration of a lossless four-port silicon photonic ROADM-node based on a monolithic-integrated spiral Al2O3:Er3+ Erbium Doped Waveguide Amplifier and MZI-interleaver layout on a Si3N4 platform is presented, routing a 4×50Gb/s WDM data-traffic capacity.

© 2021 The Author(s)

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