Abstract

We demonstrated Ge PIN waveguide photodetector operating at 2 µm wavelengths monolithically integrated on Ge-on-insulator platform. Despite at sub-bandgap wavelength, 500-µm-long photodetector exhibited 0.25 A/W responsivity at −5 V, attributable to the defect-mediated detection mechanism.

© 2020 The Author(s)

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