Abstract

We demonstrate InGaAs/InP modified uni-traveling carrier photodiodes on Si3N4 waveguides with 20 GHz bandwidth and record-high external (internal) responsivities of 0.8 A/W (0.94 A/W) and 0.33 A/W (0.83 A/W) at 1550 nm and 1064 nm, respectively. Balanced photodiodes have 10 GHz bandwidth.

© 2020 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription